A High-Density 100 W PD Charger Reference Design

This 100 W PFC+QRF reference design uses our H1 Series 200 mΩ for PFC stage and H2 Series 240 mΩ ICeGaN® 650 V device as the primary switching transistors.

The best-in-class switching performance of ICeGaN allows for a ultra compact (> 28 W/in³) and efficient (> 93%) design with low-cost QRF and CRM PFC topologies.

Key specifications:

• Using ICeGaN® 650 V, 200 mΩ, DFN 5x6 in PFC stage and ICeGaN® 650 V, 240 mΩ, DFN 5x6 in QRF stage
• Power density: >28 W/in³
• Maximum Efficiency: 93.2%
• Vin: 90-265 VAC
• Vout: 5-20 VDC
• 3-Port Outputs: 2C1A
• Low-cost Design: Only 2 x 650 V Power Transistors

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