CGD Awarded "Best Demo" at TSMC Technology Symposium
Cambridge GaN Devices (CGD) has announced that its ICeGaN™ GaN HEMT System-on-Chip (SoC) was awarded “Best Demo” at the Innovation Zone of TSMC’s 2023 Europe Technology Symposium which is one of TSMC’s largest annual showcases for its start-up customers’ cutting-edge products.
CGD Forms GaN Eco-system with Chicony Power and Cambridge University Technical Services
CGD has signed a tripartite agreement with Chicony Power Technology and Cambridge University Technical Services to conceive and develop advanced, efficient, high power-density adapters and data centre power products using GaN.
CGD Awarded "Best Demo" at TSMC Technology Symposium
Cambridge GaN Devices (CGD) has announced that its ICeGaN™ GaN HEMT System-on-Chip (SoC) was awarded “Best Demo” at the Innovation Zone of TSMC’s 2023 Europe Technology Symposium which is one of TSMC’s largest annual showcases for its start-up customers’ cutting-edge products.
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Introducing ICeGaN™ Technology
Integrated Circuit Enhancement Mode GaN: a novel platform with state-of-the-art static and dynamic performance increased ease-of-use and intelligent temperature control for the internal gate terminal for enhanced gate reliability. Unlike other existing GaN devices, our smart ICeGaN™ transistor can be operated with standard silicon gate drivers and does not require negative voltages for shutdown, hence removing the need for external, costly driving and clamping interfaces. Finally, a GaN power transistor that can be operated like a MOSFET.
As electrification advances worldwide, so does the demand for highly efficient and innovative solutions. ICeGaN™ power devices can operate at much higher switching frequency with lower losses and lower on-resistance than state-of-the-art silicon devices, delivering higher performance while increasing energy savings by as much as 50%.
GaN transistors make it easy to operate many power topologies at a much higher frequency while still achieving extremely high energy efficiency, thus enabling many applications to become smaller and lighter. CGD's ICeGaN™ integrates several features into their enhancement-mode GaN transistor to run cooler and more reliably than ever before, hence complementing the obvious advantage of GaN vs Silicon in achieving unprecedented power density.
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