CGD Announces Breakthrough Technology for EV Inverters
CGD revealed more details about Combo ICeGaN technology - a hybrid switch combining smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions for EV inverters.
CGD Announces Breakthrough Technology for EV Inverters
CGD revealed more details about Combo ICeGaN technology - a hybrid switch combining smart ICeGaN HEMT ICs and IGBTs (Insulated-Gate Bipolar Transistors) in the same module or IPM, maximizing efficiency and offering a cost-effective alternative to expensive silicon carbide (SiC) solutions for EV inverters.
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Introducing ICeGaN® Technology
Integrated Circuit Enhancement Mode GaN: a novel platform with state-of-the-art static and dynamic performance increased ease-of-use and intelligent temperature control for the internal gate terminal for enhanced gate reliability. Unlike other existing GaN devices, our smart ICeGaN® transistor can be operated with standard silicon gate drivers and does not require negative voltages for shutdown, hence removing the need for external, costly driving and clamping interfaces. Finally, a GaN power transistor that can be operated like a MOSFET.
As electrification advances worldwide, so does the demand for highly efficient and innovative solutions. ICeGaN® power devices can operate at much higher switching frequency with lower losses and lower on-resistance than state-of-the-art silicon devices, delivering higher performance while increasing energy savings by as much as 50%.
GaN transistors make it easy to operate many power topologies at a much higher frequency while still achieving extremely high energy efficiency, thus enabling many applications to become smaller and lighter. CGD's ICeGaN® integrates several features into their enhancement-mode GaN transistor to run cooler and more reliably than ever before, hence complementing the obvious advantage of GaN vs Silicon in achieving unprecedented power density.
Latest News
2.5 kW Totem Pole PFC Case Study Demos ICeGaN Ease-of-use and Robustness at Higher Powers
Cambridge GaN Devices (CGD) today announced that Inventchip, a leading provider of SiC power devices and IC solutions headquartered in Shanghai, has successfully demo’d a 2.5 kW GaN-based CCM totem-pole PFC reference design using CGD’s ICeGaN® gallium nitride ICs.
CGD's Ragini Jain Named Unsung Hero at Women Leaders in Electronics Awards
Ragini Jain was presented with her award at a ceremony last night, a special evening that brought together industry leaders, emerging talents, and advocates for diversity in electronics, hosted by TV’s Maggie Philbin and Electronics Weekly’s Editor in Chief, Caroline Hayes.
CGD Demonstrates Superiority of ICeGaN® in Motor Drives, Data Centres and EVs at PCIM 2025
CGD shows breakthrough Combo ICeGaN 100kW+ technology for EV Inverters for the first time in Europe. Visit us at Hall 7-657.
CGD Announces Breakthrough 100 kW+ Technology Enabling GaN to Address $10B+ EV Inverter Market
CGD revealed more details about a solution that will enable the company to address EV powertrain applications over 100kW – a market worth over $10B - with its ICeGaN® gallium nitride (GaN) technology.
CGD Focuses on Motor Drives, Data Centres, Scalable Power and EVs at APEC 2025
Cambridge GaN Devices (CGD) will demonstrate at APEC that the company’s ICeGaN® GaN ICs can now satisfy a broad range of applications with higher power requirements, such as servers, data centres, inverters, industrial power supplies and, very soon, automotive EVs > 100 kW.
Cambridge GaN Devices Secures $32M to Drive Growth in Power Semiconductor Industry
CGD has successfully closed the Series C funding round. The investment was led by a strategic investor with participation from British Patient Capital and supported by existing investors Parkwalk, BGF, Cambridge Innovation Capital (CIC), Foresight Group, and IQ Capital.