Defining New Levels of Energy Efficiency and Power Density

GaN power transistors (HEMTs) have seen adoption in several different power applications.

HEMTs have 10x lower gate and output capacitances vs Silicon MOSFETs and this translates into clear advantages for any systems that need fast switching and low switching losses. They are the technology of choice when outright high efficiency is a target, i.e. DataCenters, or when high efficiency is needed to achieve higher power density i.e. all applications with space/weight constraints.

As production costs continue to reduce, the number of segments seeing GaN replacing Silicon is increasing. Eventually, the industry will reach a point when there will be no reason to continue using legacy Silicon if GaN delivers better on all critical aspects for power electronics: reliability, performance, ease-of-use, design flexibility, multiple sources, maturity of the supply chain and cost.

Until then, adoption is growing significantly in the Consumer and Datacom/Telecom segments. In others, GaN solutions are in the design-in phase and will see progressive adoption over time.

CGD ICeGaN® 650V GaN technology can replace the conventional silicon MOSFET transistors in many applications, reducing switching losses, improving efficiency, and making them smaller and lighter than a more conventional silicon approach.

But primarily by delivering true ease-of-use: direct connection to standard gate drivers, no clamping components and/or driving circuits, many of the obstacles you thought existed to adopt GaN, don’t apply to ICeGaN®. As a result, the safe noise margins, robust voltage levels, & simple supplies that have made MOSFETs so good in also every electronics product, also apply to ICeGaN®.