H1 & H2 Series

Key Features and Benefits

• Single chip e-Mode GaN HEMT – has an all-in-one design for effortless design-in
• ICeGaN^® gate technology – makes the product compatible with Si MOSFET, SiC and IGBT gate drivers. It also provides a wide gate drive voltage (9-20 V)
• Integrated Miller Clamp – eliminates dv/dt induced shoot through. This also ensures true 0 V turn-off for simple gate drive
• Current Sense function – a more efficient solution to providing overcurrent protection feedback
• (H2 series) Innovative fully integrated NL³ (No Load and Light Load) Circuit – increases energy efficiency by minimising power losses in light-load and no-load operations
• Bottom-side cooled DFN packages – helps facilitate high efficiency
• Superior gate robustness.

Applications

• Consumer and lower power industrial applications, such as power supplies for laptops and tablets, motor drives and audio equipment

P2 Series

Key Features and Benefits

• Single chip e-Mode GaN HEMT – has an all-in-one design for effortless design-in
• ICeGaN^® gate technology – makes the product compatible with Si MOSFET, SiC and IGBT gate drivers. It also provides a wide gate drive voltage (9-20 V)
• Integrated Miller Clamp –eliminates dv/dt induced shoot through. This also ensures true 0 V turn-off for simple gate drive
• Thermally-enhanced packages featuring bottom-side cooling and dual-side cooling that enhance heat dissipation and increase efficiency
• Wettable flanks for automated optical inspection

Applications

• Data centre and telecom SMPS
• Industrial motor drives
• PV inverters for solar systems
• Uninterruptable power supplies
• Energy storage system.