650 V / 55 mOhm GaN HEMT with ICeGaN® Gate and Current Sense

This part is not recommended for new designs. Visit CGD65A055SH2 for an alternative. Check the EOL PCN file here.

The CGD65A055S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications.

The CGD65A055S2 features CGD’s ICeGaN® gate technology enabling compatibility with virtually all gate drivers and controller chips available. The integrated current sense function eliminates the need for a separate current sense resistor and the associated efficiency losses. Because no external sense resistor is needed, the device can be directly soldered to the large copper area of the ground plane, improving the thermal performance and simplifying the thermal design.

It comes in a DFN 8x8 SMD package to support high frequency operation while ensuring the highest thermal performance.

Applications:

• PSUs, Industrial SMPS and inverters
• Server power and data centres
• Telecom rectifiers
• Gaming PSUs
• PC power
• LED drivers
• High power ClassD Audio
• General purpose SMPS
• PV inverters
• SMPS and converters in single-switch and half-bridge topologies with hard- or soft-switching
• AC/DC and DC/DC converters
• AC inverters

Topologies:

• Totem pole and single-switch PFC
• Quasi-resonant flyback and Active Clamp flyback
• LLC, PSFB DC/DC converters at high frequency