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Cloud computing, AI, and 5G are evolving rapidly, placing immense pressure on telecommunications networks and data centres to perform efficiently and cost-effectively. Traditional power electronics are struggling to keep up with growing size, power, and cost demands. Meeting today’s infrastructure needs requires a new approach. GaN technology delivers smaller, more efficient, and higher-performing solutions — built for the future.

Why GaN? Smarter power for smarter infrastructure

As computing power needs escalate, so does the need to deliver more power per unit volume – consuming more rack space. Gallium nitride (GaN) is the breakthrough the industry has been waiting for.

Compared to traditional silicon (Si) or silicon carbide (SiC) MOSFETs, GaN provides:

  • More efficiency at higher switching frequencies
  • Much greater power density
  • Compact system size with reduced losses

A clear advantage over Si and SiC

Silicon-based power supplies typically deliver 60–70 W/in³ at 96% efficiency. To achieve the Open Rack V3 (ORV3) 97.5% efficiency requirement, they require a 40% larger size – dropping power density to a mere 50 W/in³.

SiC switches offer higher efficiency with added complexity, cost, and size.

GaN revolutionises:

  • Over 100 W/in³ power density
  • 98% efficiency
  • Compact, high-performance rack PSUs with no compromise

Introducing ICeGaN® – simplicity meets power

Cambridge GaN Devices' ICeGaN® P2 Series offers plug-and-play GaN HEMTs for straightforward design-in, enhanced efficiency, and greater system reliability.

  • Easy integration into existing designs

  • Features integrated for enhanced control and safety

  • Parallel operation for higher loads is possible

Ready to future-proof your infrastructure?

Let's build the next generation of power solutions together.

Contact Cambridge GaN Devices to learn how our technology can streamline your data centre and telecom systems.

Insights & Application Highlights

ICeGaN® Solutions

Part Number

Product Series

Product status

Type

RDS(ON)

Voltage Rating

DC Current rating

Peak Gate Voltage

Package & Dimensions

Features

Preferred Gate Driver

Availability

CGD65C025SP2P2Contact factorySingle e-Mode25 mΩ650 V (750 V)60 A20 VBHDFN-9-1 10 x10 mm²ICeGaN®Any MOSFET & IGBT driverContact us
CGD65C055SP2P2Contact factorySingle e-Mode55 mΩ650 V (750 V)27 A20 VBHDFN-9-1 10x10 mm²ICeGaN®Any MOSFET & IGBT driverContact us

Evaluation Boards

For details of Evaluation Boards, that can be used to evaluate CGD products and technology, click here.

Reference Designs

The following Table shows details of CGD reference designs suitable for Data Centre applications.
The CGD team are continuously developing new reference designs. If your requirements are not addressed by the boards listed, please contact us to discuss your specific application.

Part number

Reference design

Topology

Power (W)

Output (V)

Frequency DC-DC (kHz)

Devices used

Dimensions

Availability

CGD-ASY-EVB02501-01Reference Design - Half Bridge using ICeGaN® CGD65A055SH2Half bridgeN/AN/AN/ACGD65A055SH290 x 90 x 80Contact us
CGD-ASY-EVB030FA-013 kW Totem-Pole PFC Evaluation BoardTotem-Pole PFC300040065CGD65C025SP270 x 252 x 39Contact us

Downloads

Explore our latest collection of application notes and design resources for working with ICeGaN technology. These documents provide detailed insights into device applications, PCB layout best practices, packaging guidelines, and current sensing techniques to help engineers integrate ICeGaN HEMTs effectively and efficiently into their designs.

CGD-AN2201-ICeGaN in LLC Application Note

2022-03-21 | .pdf | 1242.48KB


CGD-AN2207-ICeGaN HEMT PCB Layout Guide

2022-03-21 | .pdf | 1821.46KB


CGD-AN2302-How to use ICeGaN

2024-05-27 | .pdf | 7380.81KB


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