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CGD65C025SP2

P2 series 650 V / 25 mΩ GaN HEMT with ICeGaN® Gate

CGD65C025SP2 is a 650 V power transistor utilising the superior material attributes of enhancement mode normally-off GaN-on-Si for high power applications, delivering high current, impressive breakdown voltage, and high switching frequency. Central to its design is CGD's hallmark ICeGaN® gate technology which provides a wide 9-20 V gate drive voltage, a 3 V threshold voltage, genuine 0 V turn off, and fast turn-on time for high frequency operation and easy paralleling. This ensures compatibility with almost all available Si/SiC MOSFET and IGBT gate drivers.

Presented in a thermally optimised and compact 10x10 mm² SMD package with wettable flanks, this power transistor is tailored for bottom side cooling and superior thermal resistance, making it ideal for multi-kW applications with demanding performance criteria.

Applications:

  • Industrial, datacentre and telecom SMPS
  • Industrial motor drives
  • PV inverters
  • Uninterruptible power supplies
  • Energy storage systems

Topologies:

  • AC/DC and DC/DC converters based on single-ended, half-bridge, full-bridge and three-phase topologies with hard- and soft-switching
  • Bridgeless Totem-pole PFC for the highest efficiency
  • DC/DC resonant converters
  • Buck and Boost converters
  • DC/AC inverters

ICeGaN® in BHDFN-9-1

Documents

Preliminary datasheet CGD65C025SP2 (BHDFN)

2024-11-27 | .pdf | 237.18KB


Product Brief for P2 Series_EN

2024-06-11 | .pdf | 1797.78KB


CGD-AN2302-How to use ICeGaN

2024-06-11 | .pdf | 7380.81KB


CGD-AN2402-ICeGaN BHDFN package

2025-05-15 | .pdf | 1194.46KB


CGD65C Recommended Footprint

2025-03-14 | .zip | 910.28KB


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