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New CEO Appointed at Cambridge GaN Devices

Appointment kickstarts next phase of growth for CGD in key markets.

Cambridge, UK, 05/01/26 - Cambridge GaN Devices (CGD), the fabless semiconductor company, dedicated to developing a range of energy-efficient GaN-based power devices to make sustainable electronics possible, today announced the appointment of Fabio Necco as Chief Executive Officer. The move is designed to drive forward CGD’s entry into key markets.

Necco takes over as CEO from CGD Co-founder, Giorgia Longobardi, who made the announcement, saying, “I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market. Fabio, is the right person with the right skill set to take CGD into its next growth phase, and I shall do all I can to support his initiatives as I transition into my new role as CMO at CGD.”

Necco comes to CGD from onsemi, the US-based semiconductor company specialised in delivering industry-leading intelligent power and intelligent sensing solutions where he was vice president and division general manager with more than 25 years’ experience in power electronics, application engineering, vehicle electrification, and data centres, all primary market focus points of CGD.

Necco said, “CGD is at an exciting juncture in its history. I have known CGD and Giorgia for years and have long been impressed with its success under her leadership. I am very excited about CGD’s unique technology and to have been chosen to lead our entire team to the next stages of product development as well as substantially increasing our presence in key markets.”

CGD's energy-efficient GaN devices enable power electronic designers to develop sustainable, energy-efficient systems. These inherent benefits, coupled with the flexibility of the proven fabless model, make CGD uniquely positioned to exploit rapidly growing markets, which can already be seen in the exponential demand for GaN technology.

Unlike many other GaN solutions, CGD's ICeGaN® technology uses a monolithic, single-chip approach that integrates all necessary components onto a single die, which substantially improves efficiency and performance.

That monolithic design means that CGD delivers compact, engineer-led GaN power devices that combine next-generation design and innovation, making it ideal for the market specific requirements of Traction/Aux inverters for electric vehicle (EV) and industrial power conversion solutions. The company’s focus on bare die, ease of use, robust gate, and parallel operation make it suitable for a wide range of power applications.

As for CGD Co-founder, Giorgia Longobardi, in addition to her continuing role as CMO at CGD, she will continue to serve as a Director on CGD’s Board and on the Advisory Board of the International Semiconductor Industry Group (I.S.I.G.).

Necco’s appointment is effective immediately.

About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN® technology is proven suitable for high-volume production, and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise, CGD was spun out from Cambridge University, and its founders, Dr. Giorgia Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, resulting from the company's commitment to innovation. The technical and commercial expertise of the CGD team, combined with an extensive track record in the power electronics market, has been fundamental to the market acceptance of its proprietary technology.

ENDS