>
News>
CGD Demos 800 VDC Multi-Level Inverter Developed Using GaN With IFPEN That Outperforms SiCCGD Demos 800 VDC Multi-Level Inverter Developed Using GaN With IFPEN That Outperforms SiC
Super-high 30 kW/l power density; simple paralleling
12/11/24
Cambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make greener electronics possible, and IFP Energies nouvelles (IFPEN), a major French public research and training organization in the fields of energy, transport and the environment, have developed a demo which confirms the suitability of CGD’s ICeGaN®650 V GaN ICs in a multi-level, 800 VDC inverter. The demo delivers super-high power density – 30 kW/l - which is greater than can be achieved by more expensive, state-of-the-art silicon-carbide (SiC)-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25mΩ / 650V ICeGaN ICs - 36 devices in total - in parallel.
ANDREA BRICCONI | CHIEF MARKETING OFFICER, CGD
“We are super excited at this first result of our partnership with IFPEN. 800 VDC supports the 800 V bus which is being increasingly adopted by the EV industry. By addressing automotive and other high voltage inverter applications with energy-efficient ICeGaN-based solutions we are delivering on CGD’s key commitment – sustainability.”
This multi-level GaN Inverters can power electric motors to over 100 kW peak, 75 kW continuous power. The CGD/IFPEN demo features: a high voltage input of up to 800Vdc; 3-phase output; a peak current of 125 Arms (10s) (180 Apk); and a continuous current of 85 Arms continuous (120 Apk).
The ICeGaN multi-level design proposed by IFPEN reveals several compelling benefits:
- Increased Efficiency: the improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained;
- Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances;
- Reduced Electromagnetic Interferences: 3-level topology minimizes EMI and enhances the reliability of the system;
- Enhanced thermal management: insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices;
- Modular design: this facilitates scalability and adaptability for varying system requirements.
GAETANO DE PAOLA | PROGRAM MANAGER, IFPEN
“Following the implementation of this inverter reference using CGD’s enabling ICeGaN ICs coupled with innovative topologies, such as multi-level solutions, IFPEN now strongly believes that GaN is a breakthrough technology in terms of performance and cost for high-voltage traction inverters.”
ENDS
About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step change in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN™ technology is proven suitable for high-volume production, and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise, CGD was spun out from Cambridge University, and its founders, CEO Dr. Giorgia Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, which is a result of the company's commitment to innovation. The technical and commercial expertise of the CGD team, combined with an extensive track record in the power electronics market, has been fundamental to the market acceptance of its proprietary technology.
About IFPEN
IFP Energies nouvelles (IFPEN) is a major research and training player in the fields of energy, transport and the environment. From scientific concepts within the framework of fundamental research, through to technological solutions in the context of applied research, innovation is central to its activities, hinged around four strategic directions: climate, environment and circular economy – renewable energies – sustainable mobility – responsible oil and gas.
The aim of IFPEN’s R&I programs is to overcome existing scientific and technological challenges in order to develop innovations that can be used by industry. IFPEN has developed, since 20 years, a strong expertise in the field of vehicle electrification. More than 50 patents have been deposited in the fields of electrical motors design, advanced control laws, and optimized power electrics systems for traction and energy generation and recovery. In the field of sustainable mobility, power electronics is a key factor for automotive electric powertrains and IFPEN know-how covers the development domains from specification to operational validation tests on the electric motors.
CONTACT INFORMATION
Weiyi Pan, Digital Marketing Manager, CGD | +44 7410 506783 [email protected]
Jeffreys Building, Suite 8, Cowley Road, Cambridge CB4 0DS
Worldwide Agency: Nick Foot, BWW Communications | +44-7808-362251 | [email protected]