Cambridge GaN Devices at Bodo's Wide Bandgap Event 2022
The power devices field has seen tremendous changes in the last decade. The market of power devices has reached ~$40bn with exponential growth in wide bandgap materials reaching CAGRs in excess of 50% in the next 3-5 years. CTO Prof. Florin Udrea joins the GaN Day at Bodo's annual Wide Bandgap Event 2022 to discuss about bandgap semiconductor technologies and materials for power devices. A comparison between different technologies and materials for diverse applications is given. The talk will answer the question what is new in these technologies and in particular how these two materials will shape the future of power electronics. Integrated and multiple channel technologies for Gallium Nitride and superjunction and FINFET technologies for Silicon Carbide will be briefly discussed.
What is new in Gallium Nitride and Silicon Carbide technologies for power electronics?
Presenter: Prof. Florin Udrea, CTO
Date: November 30 (GaN Day)
