Data Centres and Telecom

Cloud computing, AI, and 5G are evolving rapidly, placing immense pressure on telecommunications networks and data centres to perform efficiently and cost-effectively. Traditional power electronics are struggling to keep up with growing size, power, and cost demands. Meeting today’s infrastructure needs requires a new approach. GaN technology delivers smaller, more efficient, and higher-performing solutions — built for the future.

Why GaN? Smarter power for smarter infrastructure

As computing power needs escalate, so does the need to deliver more power per unit volume – consuming more rack space. Gallium nitride (GaN) is the breakthrough the industry has been waiting for.

Compared to traditional silicon (Si) or silicon carbide (SiC) MOSFETs, GaN provides:

• More efficiency at higher switching frequencies
• Much greater power density
• Compact system size with reduced losses

A clear advantage over Si and SiC

Silicon-based power supplies typically deliver 60–70 W/in³ at 96% efficiency. To achieve the Open Rack V3 (ORV3) 97.5% efficiency requirement, they require a 40% larger size – dropping power density to a mere 50 W/in³.

SiC switches offer higher efficiency with added complexity, cost, and size.

GaN revolutionises:

• 100 W/in³ power density

• 98% efficiency
• Compact, high-performance rack PSUs with no compromise

Introducing ICeGaN® – simplicity meets power

Cambridge GaN Devices' ICeGaN® P2 Series offers plug-and-play GaN HEMTs for straightforward design-in, enhanced efficiency, and greater system reliability.

• Easy integration into existing designs

• Features integrated for enhanced control and safety

• Parallel operation for higher loads is possible

Ready to future-proof your infrastructure?

Let's build the next generation of power solutions together.

Contact Cambridge GaN Devices to learn how our technology can streamline your data centre and telecom systems.

Insights & Application Highlights

ICeGaN® Solutions

Board

Downloads

Explore our latest collection of application notes and design resources for working with ICeGaN technology. These documents provide detailed insights into device applications, PCB layout best practices, packaging guidelines, and current sensing techniques to help engineers integrate ICeGaN HEMTs effectively and efficiently into their designs.