CGD wins Hyundai innovation challenge for sporty driving
One-chip ICeGaN® solution selected for its robustness and ease of use when integrated into EV traction inverter power modules
Cambridge, UK, December 4, 2025 - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make sustainable electronics simpler to design and implement, has been named as one of the winners of Hyundai’s Open Innovation Challenge on the future of sporty driving. Out of nearly 50 visionary companies, CGD's unique one-chip ICeGaN® solution has been selected for its robustness and ease of use showing high potential for utilisation in power modules for EV traction inverters. This revolutionary technology enables GaN to be considered as a cost-effective alternative to expensive SiC solutions in the high-power EV inverter market.
Daniel Murphy | Senior Director, Product Management, CGD
“Hyundai CRADLE is the global arm of open innovation within Hyundai Motor Group. Its mission is to search for and work with anyone or any association that has new ideas, products or technologies that can help build a world with better mobility experiences for all. Therefore, we are honoured that CGD and our ICeGaN IC technology has been recognised as a winning technology, and we're excited to explore how GaN can drive a more dynamic and energy-efficient future for EVs."
Dr Reza Fathi | Senior Manager, HYUNDAI CRADLE
“GaN presents significant advantages over both traditional silicon and silicon carbide, which we are investigating. We are excited to collaborate with CGD on our ongoing proof-of-concept project to evaluate CGD’s promising ICeGaN technology for potential automotive applications.”
The Hyundai Motor Europe Technical Centre (HMETC) is part of the world-renowned Hyundai, Kia, and Genesis brands, and it is the company’s sole research and development centre in Europe. Together Hyundai CRADLE and HMETC are looking for companies to elevate and support the future of sporty driving. The Hyundai CRADLE & HMETC Open Innovation Challenge 2025, themed 'Sporty Driving: An Open Call for Tech Visionaries' aims to discover the most innovative entrepreneurial and technological projects in Europe’s and Israel’s automotive and mobility sector, with the focus on high-performance applications.
ICeGaN's monolithically integrated control and protection features support the operation of multiple devices in parallel, for higher power applications, and reduces the external component count, improving reliability and solution size.
About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN® technology is proven suitable for high-volume production, and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise, CGD was spun out from Cambridge University, and its founders, CEO Dr. Giorgia Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, resulting from the company's commitment to innovation. The technical and commercial expertise of the CGD team, combined with an extensive track record in the power electronics market, has been fundamental to the market acceptance of its proprietary technology.
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CONTACT INFORMATION
Sam Zacherino, Corporate Marketing, CGD | +44 1223 425185 [email protected]
Jeffreys Building, Suite 8, Cowley Road, Cambridge CB4 0DS
Eden Shelley, Account Manager, Napier Partnership | +44-1243-531123 | [email protected]