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Highlights at PCIM

During May 10-12, CGD participated in PCIM Europe in Nuremberg, Germany, the world's leading exhibition and conference for power electronics, intelligent motion, renewable energy and energy management. The CGD team brought the first portfolio of 650 V GaN products and latest evaluation boards to the trade show, receiving extensive attention from media and industry.

Interview with Dr. Giorgia Longobardi Novel GaN transistors from Cambridge GaN Devices
Novel GaN Transistors From Cambridge GaN Devices | elektronik

Co-Founder and CEO Giorgia Longobardi introduced to Ralf Higgelke about CGD's game-changing GaN transistors that can be driven as easily and robustly as silicon MOSFETs.

E-Mode GaN Transistor Works Like Silicon MOSFET for Easier Design-In | Electronic Design
E-Mode GaN Transistor Works Like Silicon MOSFET for Easier Design-In | Electronic Design

Peter Comiskey, Head of Application Engineering, illustrated the ease-of-use of CGD GaN transistors to Alix Paultre from Electronic Design. "We are really keen to emphasize that you are not losing the advantages of GaN," noted by Peter.

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Exhibitor Forum

Co-Founder and CEO Giorgia Longobardi gave the first talk of Exhibitor Forum at PCIM, demonstrating CGD's industry-first ease-of-use enhancement-mode GaN technology.

CGD booth at PCIM

A green booth delivered one of the most important company values at CGD - sustainability. At the booth, it was illustrated how GaN products can help achieve reduce environmental impact by reaching higher energy efficiency compared to conventional Silicon products.

CGD team at PCIM

This is the wonderful team who presented CGD's latest advancements on ICeGaN™ technology and on applications at the trade show.