CGD to Debut Easy-to-use, Reliable ICeGaN GaN HEMT Family in China at PCIM Asia 1
Visit Booth 2G18, Shanghai New International Exhibition Center, August 29-31
July 25, 2023
Cambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, will exhibit for the first time at PCIM Asia, the only exhibition in China specialising in power electronics and its applications in the fields of intelligent motion, renewable energy and energy management. As well as debuting its easy-to-use, reliable ICeGaN™ GaN HEMT family in China, CGD will have a full booth presence with demos, and will also present a keynote speech and two technical applications presentations during the event.
The opening keynote presentation on Tuesday 29th August at 10.00am will be given by Professor Florin Udrea, CTO, Cambridge GaN Devices, entitled: ‘The New Generation of Gallium Nitride Power Devices; Breaking the Limits of Ease-of-Use and Reliability’. At, 11.25am, Tuesday 29th August, CGD’s Martin Cheung, Senior Lead Application Engineer, will present a discussion ‘Reducing steady state losses in high performance charger topologies’, then the following day, at 10.55am, Wednesday August 30 th, he will present ‘Tuning GaN switching performance and operation in parallel’.
ANDREA BRICCONI | CHIEF COMMERCIAL OFFICER, CGD
“China and the Asia general are vital for CGD as we look to introduce our innovative, easy-to-use, rugged and reliable GaN solutions to the worldwide markets. PCIM Asia will see CGD debut our H2 series ICeGaN™ HEMT solutions in China. We are excited to be present at Asia’s leading power event for the first time and to meet existing and potential new customers and hear about their applications so we can deliver solutions that best fit their requirements.”
Welcome to visit CGD at booth 2G18 at PCIM Asia.
Contact us here to reserve an appointment.
About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step change in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN™ technology is proven suitable for high volume production and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise, CGD was spun out from Cambridge University, and its founders, CEO Dr Giorgia Longobardi and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly-growing IP portfolio which is a result of the company's commitment to innovation. The technical and commercial expertise of the CGD team combined with an extensive track record in the power electronics market has been fundamental to the market acceptance of its proprietary technology.