These high-growth markets represent a huge opportunity for GaN. The International Energy Agency expects the energy used by data centres to double by 2030¹ making energy efficiency improvements a key imperative. It is forecasted that the data centre power semiconductor market will see a CAGR of 11.0% reaching global sales of USD 4.29 billion by 20322 while ResearchandMarkets.com have forecasted that the electric vehicle (EV) traction inverter market will see a CAGR of 16.1%, reach global sales of USD 67.6 billion in 2034³.

This new long-term collaboration will enable NXP to develop GaN-based system solutions, leveraging CGD’s advanced GaN products, early access to next-generation CGD GaN developments, and the team’s extensive expertise in GaN processes and technologies. At the same time, CGD will benefit from access to NXP’s broad processor and analog product portfolios, system know-how and global commercial reach, accelerating market penetration through optimised system-level solutions.

Fabio Necco | CEO, CGD
“By working closely with NXP, we are accelerating the shift towards a new class of GaN-based power electronics. This collaboration is about leveraging GaN performance to increase efficiency, power density and reliability into real-world data centre and automotive systems, where performance, cost and sustainability now must go hand-in-hand.”

Chris Bretz | Vice President, Advanced Power Systems, NXP
“CGD combines advanced GaN innovation with practical, scalable power solutions, delivering superior robustness, reliability, and system-level performance. With deep device expertise and strong know-how, CGD is an ideal long-term collaborator for NXP to accelerate high-efficiency GaN adoption across high-growth markets.”

GaN semiconductors enable switching at higher frequencies and achieve greater efficiency compared to competing technologies.

The rapidly increasing power demands in data centres is particularly driven by the growing use of AI. A single rack might have only consumed 40 kW in 2022 yet today can draw 200 kW or more and it is expected that a single rack will require 1 MW or more by 2030. The increased compute density and modern power architectures place stringent requirements on power density and the need to deliver high step-down ratios while maintaining power efficiency. ICeGaN is uniquely positioned to address these requirements enabling higher switching frequency operations, higher power density and delivering superior reliability compared to discrete GaN solutions.

In automotive traction inverters, GaN can improve efficiency at low load. CGD’s ICeGaN technology is the only single chip GaN-based technology running on a standard driver that enables paralleling of multiple devices to meet the high current requirements demanded by traction inverters.

The complementary IP and set of skills of the two companies will enable uniquely differentiated system level solutions for customers exploring the benefits of GaN devices in these two important markets.

1 International Energy Agency (IEA) (2025), Energy and AI, IEA, Paris https://www.iea.org/reports/energy-and-ai, Licence: CC BY 4.0
2 Data Center Power Semiconductor Market Size, Share & Growth Report 2032
3 ResearchandMarkets.com (2025), Traction Inverter Market Outlook 2025-2034: Market Share, and Growth Analysis By Propulsion (Battery Electric Vehicle (BEV), Hybrid Electric Vehicles (HEV), Plug-In Hybrid Electric Vehicles (PHEV), Other Propulsion), By Technology, By Vehicle.

About ICeGaN®
CGD’s proprietary monolithic ICeGaN® technology, brings higher efficiency and greater ease of use as ICeGaN devices are driven the same way as a conventional silicon or silicon carbide device. Unlike conventional GaN, this makes paralleling easily achievable as it eliminates the challenges of balancing the gate drive voltages and generating the correct negative voltage to turn the device off. The integrated ICeGaN circuit also ensures high gate robustness up to 80V and can also include other valuable features such as slew rate control and DESAT protection.

About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN® technology is proven suitable for high-volume production, and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise under the leadership of CEO Fabio Necco, a power semiconductor industry veteran, CGD was spun out from Cambridge University. Its founders, CMO Dr. Giorgia Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, resulting from the company's commitment to innovation. The technical and commercial expertise of the CGD team, combined with an extensive track record in the power electronics market, has been fundamental to the market acceptance of its proprietary technology.