CGD Demonstrates Ease of Use of New, Available GaN Devices at Electronica 2022

DR GIORGIA LONGOBARDI | CEO AND FOUNDER, CGD

“Sustainability and how to achieve it are key messages for the world, right now. CGD is committed to enabling sustainable power – both generation and use – through our key values of Knowledge, Innovation and Collaboration. Electronica is the perfect platform for CGD to demonstrate our power-saving solutions, and how simple they are to implement for consumer devices and beyond.”

Prof. Florin Udrea, Founder and Chief Technology Officer (CTO) at CGD will take part in a panel discussion entitled ‘Gallium Nitride – Beyond Consumer Electronics’, moderated by Ralf Higgelke, specialist Power editor at Markt & Technik/www.elektroniknet.de/WEKA Fachmedien at 1 pm CET, November 16th, Hall C3, Stand 577.

Also speaking during the Embedded Platform Conference at the Power Electronics program which will run at the ICM within the Messe München complex, will be Dr. Nirmana Perera, Power Electronics Engineer at CGD on ‘The challenges & possibilities of GaN devices in Parallel’ (10.30 am CET, November 16th).

On booth C3.535, CGD will show industry’s first easy-to-use and scalable 650 V GaN HEMT family. The company’s ICeGaN™ H1 series are single-chip eMode HEMT devices that can be driven like a MOSFET, without the need for special gate drivers, complex and lossy driving circuits, negative voltage supply requirements or additional clamping components.

ICeGaN HEMTs require no cascode structure, no complex multi-chip configurations, and no thermally-complex integrated solutions. Instead, they are a single-chip solution with embedded proprietary logic which enables the coupling with standard gate drivers or controllers.

Launched earlier this year, H1 ICeGaN HEMTs are now available for volume production applications following a scale-up financed by two funding rounds.

Strategic partnerships are a key part of CGD’s go-to-market plans. At Electronica, the company will show two demos developed with key partners: a full 3kV photo voltaic solar inverter; and a Class D audio amplifier. The booth will also feature many demos developed by CGD, including a 65W QR flyback reference design, a 350W PFC/LLC reference design and a 3kW LLC platform.

DR GIORGIA LONGOBARDI | CEO AND FOUNDER, CGD

“Power electronics is now at the centre of a global movement to improve society by turning away from old fossil-fuel-burning technologies to new energy-efficient solutions. GaN is right at the heart of this movement, so we encourage everyone to visit Electronica, and our booth, to see these innovations in action. The future of clean power is right here, right now.”

ENDS

About Cambridge GaN Devices

Cambridge GaN Devices (CGD) is a fabless semiconductor company spun-out by Professor Florin Udrea and Dr Giorgia Longobardi from Cambridge University in 2016 to exploit a revolutionary technology in power devices. Our mission is to shape the future of power electronics by delivering the most efficient and easy-to-use transistor. CGD designs, develops and commercialises GaN transistors and ICs enabling a radical step change in energy efficiency and compactness and is suitable for high volume production. CGD’s ICeGaN™ technology is protected by a strong IP portfolio which constantly grows based on the company's leading innovation skills and ambitions. In addition to the multi-million seed fund and Series A private investments, CGD has so far successfully secured four projects funded by iUK, BEIS and EU (Penta). The technical and commercial expertise of the CGD team combined with an extensive track record in the power electronics market has been fundamental in early market traction of its proprietary technology.

Contact Information

Andrea Bricconi, VP Business Development, [email protected]

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