Cambridge, UK - Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops energy-efficient GaN-based power devices that make sustainable electronics simpler to design and implement, today announced the appointment of Robin Lyle as Vice President of R&D. Lyle’s appointment will further strengthen CGD’s mission to revolutionise power electronics and accelerate the transition to energy-efficient systems. A 30-year veteran of the power semiconductor industry, Lyle brings a wealth of experience and insight to the role.

ROBIN LYLE | VP, R&D, CGD
“In my previous positions I worked on higher power systems, modules and gate drivers, all of which are beginning to enjoy the size, efficiency and speed benefits that GaN brings. GaN will enable applications that haven’t been possible before, and our ICeGaN® ICs – by integrating the driver interface circuitry and protection features on the same GaN chip as the switch – make implementing GaN-based designs very easy.”

With an impressive background in analogue and power semiconductor technology, most recently at power module company, Dynex, Lyle’s experience, will prove invaluable as CGD develops its product portfolio to address the power-hungry demands of data centres, higher power industrial power supplies and EV applications such as DC-to-DC converters, on-board chargers and even traction inverters. Lyle is also closely connected with academia, including a formal position at the University of Nottingham where he is part of the industrial advisory board for electronic engineering, helping to shape the syllabus and working with the under-graduates.

Dr GIORGIA LONGOBARDI | FOUNDER AND CEO, CGD
“We are delighted to name Robin as our new VP, R&D. CGD is a company founded on new ideas and innovation and this appointment strengthens our capabilities in high power systems, where GaN has a bright future.”

ROBIN LYLE | VP, R&D, CGD
“It’s exciting to join the international and diverse team here at CGD, and to be part of the next generation of power technology. Our focus is to continue to develop innovative GaN solutions that address the challenges customers face as they move up in power, and to make GaN easy to use.”

ENDS

About Cambridge GaN Devices
Cambridge GaN Devices (CGD) designs, develops and commercialises GaN transistors and ICs enabling a radical step in energy efficiency and compactness. Our mission is to bring innovation into everyday life by delivering effortless energy-efficient GaN solutions. CGD’s ICeGaN® technology is proven suitable for high-volume production, and the company is rapidly scaling up with manufacturing and customer partnerships in place. A fabless enterprise, CGD was spun out from Cambridge University, and its founders, CEO Dr. Giorgia Longobardi, and CTO Professor Florin Udrea, still retain strong links with the world-renowned High Voltage Microelectronics and Sensors group (HVMS) at the University. CGD’s ICeGaN HEMT technology is protected by a strong and constantly growing IP portfolio, resulting from the company's commitment to innovation. The technical and commercial expertise of the CGD team, combined with an extensive track record in the power electronics market, has been fundamental to the market acceptance of its proprietary technology.

CONTACT INFORMATION
Sam Zacherino, Corporate Marketing, CGD | +44 1223 425185 [email protected] Jeffreys Building, Suite 8, Cowley Road, Cambridge CB4 0DS

Worldwide Agency: Nick Foot, BWW Communications | +44-7808-362251 | [email protected]