Reference Design: CGD-ASYRFD003FA-02
A Compact and High Power Density Quasi-Resonant Flyback Reference Design
This topology highlights low power dissipation and better heatsink due to the use of ICeGaN® current sense.
Features:
- Features 240 mΩ 650 V GaN HEMTs based on CGD ICeGaN® technology
- Combines the unique built-in current sense solution of CGD GaN HEMTs that allows the HEMT to use entire source plane as heatsink
- Adjustable output voltage
- Low manufacturing cost
- Universal input
- Single switch topology
Key specifications:
- Dimensions: 67.5 x 35.2 x 16.5 mm
- Vin 90–264 VAC
- Vout 5/9/12/15/20 VDC
- Maximum Efficiency 92%
- Typical frequency range 25 - 180kHz
Application: USB PD charger
Documents
Quick Reference
QR2403_65 W QR Flyback Reference Design
2024-04-15 | .pdf | 785.05KB
Application Notes
CGD-AN2206-Current Sensing with ICeGaN Application Note
2024-03-20 | .pdf | 1535.44KB
CGD_AN2207_ICeGaN HEMT PCB Layout Guide
2023-03-21 | .pdf | 1821.46KB
CGD-AN2302-How to Use ICeGaN
2024-05-27 | .pdf | 7380.81KB
User Guide
UG2403-65W Quasi-Resonant Flyback Reference Board
2024-04-16 | .pdf | 3081.89KB