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Reference Design: CGD-ASYRFD003FA-02

A Compact and High Power Density Quasi-Resonant Flyback Reference Design

This topology highlights low power dissipation and better heatsink due to the use of ICeGaN® current sense.

Features:

  • Features 240 mΩ 650 V GaN HEMTs based on CGD ICeGaN® technology
  • Combines the unique built-in current sense solution of CGD GaN HEMTs that allows the HEMT to use entire source plane as heatsink
  • Adjustable output voltage
  • Low manufacturing cost
  • Universal input
  • Single switch topology

Key specifications:

  • Dimensions: 67.5 x 35.2 x 16.5 mm
  • Vin 90–264 VAC
  • Vout 5/9/12/15/20 VDC
  • Maximum Efficiency 92%
  • Typical frequency range 25 - 180kHz

Application: USB PD charger

Documents

QR2403_65 W QR Flyback Reference Design

2024-04-15 | .pdf | 785.05KB


CGD_AN2207_ICeGaN HEMT PCB Layout Guide

2023-03-21 | .pdf | 1821.46KB


CGD-AN2302-How to Use ICeGaN

2024-05-27 | .pdf | 7380.81KB