P2 series 650 V / 55 mΩ GaN HEMT with ICeGaN® Gate and Dual Gate Pinout

CGD65D055SP2 is a 650 V power transistor utilising the superior material attributes of enhancement mode normally-off GaN-on-Si for high power applications, delivering high current, impressive breakdown voltage, and high switching frequency. Central to its design is CGD's hallmark ICeGaN® gate technology which provides a wide 9-20 V gate drive voltage, a 3 V threshold voltage, genuine 0 V turn off, and fast turn-on time for high frequency operation and easy paralleling. This ensures compatibility with almost all available Si/SiC MOSFET and IGBT gate drivers.

The dual gate pinout design allows for easy paralleling and versatile PCB design. Presented in a thermally optimized 10x10 mm² SMD package with wettable flanks, this 25 mΩ GaN power transistor is optimized for dual side cooling and superior thermal resistance, making it ideal for multi-kW applications with demanding performance criteria.

Applications:

• Industrial, data centre and telecom SMPS
• Industrial motor drives
• PV inverters
• Uninterruptible power supplies
• Energy storage systems

Topologies:

• AC/DC and DC/DC converters based on single-ended, half-bridge, full-bridge and three-phase topologies with hard- and soft-switching
• Bridgeless Totem-pole PFC for the highest efficiency
• DC/DC resonant converters
• Buck and Boost converters
• DC/AC inverters