P2 series 650 V / 25 mΩ GaN HEMT with ICeGaN® Gate and Dual Gate Pinout

CGD65D025SP2 is a 650 V power transistor utilising the superior material attributes of enhancement mode normally-off GaN-on-Si for high power applications, delivering high current, impressive breakdown voltage, and high switching frequency. Central to its design is CGD's hallmark ICeGaN® gate technology which provides a wide 9-20 V gate drive voltage, a 3 V threshold voltage, genuine 0 V turn off, and fast turn-on time for high frequency operation and easy paralleling. This ensures compatibility with almost all available Si MOSFET, SiC and IGBT gate drivers.

The dual gate pinout design allows for easy paralleling and versatile PCB design. Presented in a thermally optimized 10x10 mm² SMD package with wettable flanks, this 25 mΩ GaN power transistor is optimized for dual side cooling and superior thermal resistance, making it ideal for multi-kW applications with demanding performance criteria.

Applications:

• Industrial, data centre and telecom SMPS
• Industrial motor drives
• PV inverters
• Uninterruptible power supplies
• Energy storage systems

Topologies:

• AC/DC and DC/DC converters based on single-ended, half-bridge, full-bridge and three-phase topologies with hard- and soft-switching
• Bridgeless Totem-pole PFC for the highest efficiency
• DC/DC resonant converters
• Buck and Boost converters
• DC/AC inverters