CGD65A130S2
650 V / 130 mOhm GaN HEMT with ICeGaN™ Gate and Current Sense
The CGD65A130S2 is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications.
The CGD65A130S2 features CGD’s ICeGaN™ gate technology enabling compatibility with virtually all gate drivers and controller chips available. The integrated current sense function eliminates the need for a separate current sense resistor and the associated efficiency losses. Because no external sense resistor is needed, the device can be directly soldered to the large copper area of the ground plane, improving the thermal performance and simplifying the thermal design.
It comes in a DFN 8x8 SMD package to support high frequency operation while ensuring the highest thermal performance.
Applications:
- PSUs, Industrial SMPS and inverters
- Mobile chargers, fast-chargers
- AC adapters
- Notebook adapters
- Gaming PSUs
- PC power
- LED lighting
- ClassD Audio
- TV and wireless power
- PV micro-inverters
- SMPS and converters in single-switch and half-bridge topologies with hard- or soft-switching
- AC/DC and DC/DC converters
- AC inverters
Topologies:
- Quasi-resonant flyback and Active Clamp flyback
- Totem pole and single-switch PFC
- LLC, PSFB DC/DC converters at high frequency
- ClassD and ClassE
Documents
Datasheet
Product Brief
Product Brief for H1 Series_EN
2024-03-25 | .pdf | 3655.71KB
Application Notes
CGD-AN2201-ICeGaN in LLC Application Note
2022-03-21 | .pdf | 2386.29KB
CGD-AN2206-Current Sensing with ICeGaN Application Note
2024-03-20 | .pdf | 1535.44KB
CGD-AN2207-ICeGaN HEMT PCB Layout Guide
2022-03-21 | .pdf | 1821.46KB
Design Files
CGD65A Recommended Footprint
2024-03-20 | .pdf | 306.4KB
CGD65A Altium Library
2024-03-20 | .zip | 1409.12KB