Application notes and whitepapers

This application note demonstrates how a conventional LLC power supply designed for silicon MOSFETs can be easily adapted to use CGD's ICeGaN technology. It shows how ICeGaN devices can be driven directly from existing analogue controllers, enabling a straightforward transition to GaN while achieving higher switching frequencies and improved efficiency.

This application note provides PCB layout recommendations for ICeGaN devices, with a focus on optimising thermal performance when PCB copper is used as the only heatsinking method.

This application note examines the parallel operation of ICeGaN GaN HEMTs under hard-switching conditions. It evaluates the effects of device mismatch and operating temperature using both simulation and measured test data, demonstrating strong correlation and robust static and dynamic performance.

This application note introduces the key features of CGD's ICeGaN (Integrated Circuit Enhancement-mode Gallium Nitride) technology and outlines the key design considerations for successfully implementing ICeGaN devices in power conversion applications.

This application note describes CGD's bottom-side cooled 10 mm × 10 mm BHDFN package used for the CGD65C025SP2 and CGD65C055SP2 devices, including its thermal and mechanical characteristics.

This application note explains the current sensing capability of ICeGaN devices and how to use it effectively in power system designs. It reviews conventional current sensing methods and demonstrates the advantages of the integrated ICeGaN current sense output.

This white paper introduces CGD's ICeGaN® (Integrated Circuit Enhancement-mode Gallium Nitride) technology and compares its architecture, performance and integration benefits against conventional silicon and GaN power solutions.

This white paper provides PCB design guidelines for CGD's ICeGaN H2 devices. It explains how to maximise the benefits of source-pad cooling and demonstrates the resulting thermal performance advantages using a flyback power supply.

The rise of AI compute needs is driving rapid growth in GPU thermal design power (TDP) and increasing the demands placed on power distribution within the data centre. To address +1 MW rack power demands, the industry is rapidly shifting from conventional 48 V to 800 VDC (or ±400 VDC) architectures, led by early adopters such as Nvidia and other major hyperscalers. This white paper explores how ICeGaN technology enables highly efficient, high-density power conversion and is particularly well suited to next-generation power supplies, including 800 V DC/DC converters for AI data centres.