CGD65B240SH2

H2 series 650 V / 240 mΩ GaN HEMT with ICeGaN® Gate, Current Sense and NL³ Circuit

Introducing the CGD65B240SH2, an enhancement mode GaN-on-silicon power transistor that capitalizes on the unique material properties of GaN to deliver high current, high breakdown voltage, and high switching frequency for a wide range of electronics applications.

Featuring CGD's ICeGaN® gate technology, the CGD65B240SH2 offers compatibility with almost all gate drivers and controller chips. The integrated current sense function eliminates the need for a separate current sense resistor in series with the source, reducing efficiency losses. As a result, the device can be directly soldered to the large copper area of the ground plane, enhancing thermal performance and simplifying thermal design.

The H2 series ICeGaN® also incorporates an advanced NL³ Circuit, leading to record low power losses at No Load and Light Load operations.

Packaged in a DFN 5x6 SMD, the CGD65B240SH2 supports high-frequency operation while ensuring exceptional thermal performance.

Applications:

• PSUs, Industrial SMPS and inverters
• USB PD and fast-chargers
• Mobile chargers
• AC/DC and DC/DC converters
• AC adapters
• Gaming PSUs and notebook adapters
• PC power
• LED lighting
• ClassD Audio Amplifiers
• TV and wireless powe

Topologies:

• All flyback topologies
• Totem pole and single-switch PFC
• LLC, PSFB DC/DC converters at high frequency
• ClassD and ClassE