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FASTER. SMARTER. SMALLER. SUPERPOWERED DEVICES
at the heart of electronics.
>100
FASTER
SPEED
3X
SMALLER
5-10X
LESS
POWER LOSS
4 AREAS WHERE CGD ARE CHANGING THE FUTURE
DATA CENTRE

Longer drive distance per charging time Eliminate cooling requirement.

WIRELESS
CHARGING

High speed wireless charging.

SOLAR PANEL
INVERTERS

Renewable energy systems that can store and convert more power.

POWER SUPPLY

Smaller more compact.

ABOUT US

After almost a decade of leading-edge research and development at Cambridge University, CEO Giorgia Longobardi and her team have launched Cambridge GaN Devices (CGD).

CGD has been created to explore and develop a number of unique opportunities in power electronics made possible by the team’s proprietary application of Gallium Nitride to the silicon-based semiconductor transistor manufacturing process. With silicon transistors widely acknowledged as having attained maximum efficiency, CGD’s power design engineers have developed a range of Gallium Nitride transistors that are over 100 times faster, lose 5 – 10 times less power and are 4 times smaller than existing silicon equivalents. The possibilities and range of potential applications for these transistors is almost endless in this increasingly digitally connected world.

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GIORGIA LONGOBARDI - FOUNDER
• 10 years experience in Gallium
Nitride Power devices

• 8 years of experience in Project
management oriented in technology
innovation and product development

• 2019 Royal Academy of Engineering
Trust Young Engineer of the Year

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FLORIN UDREA – FOUNDER
• World wide recognised expert in
Power Devices

• Founder of 5 semiconductor
spin-off companies from Cambridge
University

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ZAHID ANSARI – VICE-PRESIDENT OF OPERATIONS
• 20 years with responsibility for IC
manufacturing

• 14 years in Electronic Power Conversion
businesses

• VP of Business Development, VP of
Operations and Director of Product
Engineering at CamSemi

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MARTIN ARNOLD – DIRECTOR OF ENGINEERING
• 10 years of experience in power
semiconductors (design, packaging,
characterisation)

• Senior R&D engineer at Anvil semiconductors
and ABB semiconductors

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LOIZOS EFTHYMIOU – (TITLE)
• 4 Years of experience in GaN
Power devices in collaboration
with the Founders of CGD

• One of the inventors of CGD
technology

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LUCY COOK – FINANCE AND OFFICE MANAGER
• Strong experience as CFO in
Cambridge CMOS sensors

• Experience as a Finance manager
of start-ups

TECHNOLOGY

> 100
FASTER SPEED

Cambridge GaN Devices Gallium Nitride transistors can switch high voltages and currents over 100 times faster than the best-selling commercial silicon MOSFET guarantying reliable operation compared to the existing GaN solutions. As GaN transistors begin to replace silicon in everything from consumer electronics chargers, data servers, and solar panel invertersthis technology will help transform the future.

5-10X
LESS POWER LOSS

Cambridge GaN Devices Gallium Nitride transistors, take advantage of the tremendous proprieties of GaN such as the material’s higher critical electrical field, the extremely high-electron mobility, and low on-state resistance to deliver efficient power transitors which are less hot and therefore require significantly smaller cooling requirement.

3X
SMALLER

Cambridge GaN Devices Gallium Nitride transistors are not only physically smaller but can also operate at higher power densities and higher frequency than silicon equivalents. Smaller chips united with smaller passive components and reduced cooling requirement enables light and compact building blocs for the final application.

Cambridge GaN Devices (CGD) bring to customers Gallium Nitride (GaN) transistors with significantly higher switching frequency, lower losses and lower on-resistance than the most commercially successful silicon alternatives. Using GaN as the main semiconductor and growing this on a silicon substrate, combined with a suite of proprietary technical innovations, provides CGD with a number of competitive advantages:

• CGD GaN transistors are extremely reliable even at the highest frequencies

• CGD GaN technology enables both smaller transistors and associated circuit

• High efficiency operation and reduced cooling requirements significantly reduce the Bill of materials

• CGD GaN transistors have been designed with the end-user in mind and can readily displace silicon
alternatives with little or no technical training

• With silicon as the substrate, CGD GaN transistors can –benefit from low-cost manufacturing processes.

APPLICATIONS
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DATA CENTRE
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WIRELESS CHARGING
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SOLAR PANEL INVERTERS
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ON-BOARD CHARGERS AND INVERTERS
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POWER SUPPLIES
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LED DRIVERS

CGD GaN technology can be applied to almost anything that requires power and operates in the rich 650V market segment. And the market for anything that helps provide power faster, more efficiently and via smaller chargers, or even wirelessly, continues to enjoy exponential growth. Beyond the environmental benefit of the more efficient use, and thereby saving, of electricity and lowering CO2 emissions, both industrial and consumer demand for faster, smaller and more economical devices will drive widespread adoption of GaN technology in consumer electronics and beyond.

NEWS

News
Careers & Collaboration

Passionate about perfection

CAREERS

CGD are always interested in hearing from candidates with a background in power electronics, power devices or GaN technology and who want to work in a start-up, fast-moving, dynamic environment where they can use their experience, expertise and initiative to add value.

COLLABORATION

CGD are always interested in hearing from other companies, researchers or universities who are open to discussing or developing ideas on GaN technology in a collaborative, mutually beneficial environment.

CONTACT

E-mail us: recruitment@camgandevices.com

Pay us a visit: Cambridge Gan Devices,
Deanland House, 160 Cowley Road,
Cambridge, CB4 0