Martin has more than 12 years of experience in power semiconductor devices R&D. This includes silicon devices as well as SiC (Silicon Carbide) and GaN. During 8 years at ABB Semiconductors in Switzerland, he successfully led large international device development projects with industrial and academic partners.In close collaboration with customers, he took new device designs and technologies of Si power devices all the way to market introduction and mass production. At Cambridge GaN Devices, Martin leads the GaN device technology and product development together with the team of engineers. Martin holds a MSc and PhD in semiconductor device physics from ETH Zürich, Switzerland. He holds a dozen patents on semiconductor devices.