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ABOUT US

After almost a decade of leading-edge research and development at Cambridge University, CEO Giorgia Longobardi and her team have launched Cambridge GaN Devices (CGD).

CGD has been created to explore and develop a number of unique opportunities in power electronics made possible by the team’s proprietary application of Gallium Nitride to the silicon-based semiconductor transistor manufacturing process. With silicon transistors widely acknowledged as having attained maximum efficiency, CGD’s power design engineers have developed a range of Gallium Nitride transistors that are over 100 times faster, lose 5 – 10 times less power and are 4 times smaller than existing silicon equivalents. The possibilities and range of potential applications for these transistors is almost endless in this increasingly digitally connected world.

Giorgia Longobardi
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GIORGIA LONGOBARDI
Founder & CEO
Florin Udrea
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FLORIN UDREA
Founder & CTO
Andrea Bricconi
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ANDREA BRICCONI
VP of Business Development
Zahid Ansari
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ZAHID ANSARI
VP of Operations
Dr Martin Arnold
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MARTIN ARNOLD
Director of Engineering
Peter Comiskey
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PETER COMISKEY
Director of Application Engineering
Pete Hutton
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PETE HUTTON
Chairman
Giorgia Longobardi
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GIORGIA LONGOBARDI
Founder & CEO
Florin Udrea
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FLORIN UDREA
Founder & CTO
Dr Alain Charles
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ALAIN CHARLES
Non Executive Director
John Pearson
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Dr Anne Dobrée
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Ed Stacy
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Tim Rea
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Nick Mettyear
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Adrian Sugget
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