Introducing ICeGaN™ Technology

Industry-First, Easy to Use e-Mode GaN
Industry-First, Easy to Use e-Mode GaN

Integrated Circuit Enhancement Mode GaN: a novel platform with state-of-the-art static and dynamic performance increased ease-of-use and intelligent temperature control for the internal gate terminal for enhanced gate reliability. Unlike other existing GaN devices, our smart ICeGaN™ transistor can be operated with standard silicon gate drivers and does not require negative voltages for shutdown, hence removing the need for external, costly driving and clamping interfaces. Finally, a GaN power transistor that can be operated like a MOSFET.

> 50% Energy Saved
> 50% Energy Saved

As electrification advances worldwide, so does the demand for highly efficient and innovative solutions. ICeGaN™ power devices can operate at much higher switching frequency with lower losses and lower on-resistance than state-of-the-art silicon devices, delivering higher performance while increasing energy savings by as much as 50%.

> 2x Smaller Electronics
> 2x Smaller Electronics

GaN transistors make it easy to operate many power topologies at a much higher frequency while still achieving extremely high energy efficiency, thus enabling many applications to become smaller and lighter. CGD's ICeGaN™ integrates several features into their enhancement-mode GaN transistor to run cooler and more reliably than ever before, hence complementing the obvious advantage of GaN vs Silicon in achieving unprecedented power density.

Latest News

Cambridge GaN Devices Moves to Support Industrial Applications With Higher Power Reference Designs and Demos

At the APEC 2024, IEEE Applied Power Electronics Conference and Exposition, Cambridge GaN Devices is introducing new reference designs and showing demos which address the broad and diverse industrial market.

Cambridge GaN Devices Addresses Challenges of Datacentres and More at APEC 2024

CGD will contribute with a number of papers including an analysis of how GaN can play a part in supporting the exponential growth in power demanded by datacentres as the use of Artificial Intelligence (AI) proliferates.

Leadership Article | Andrea Bricconi, CCO: Knowledge is a Shared Adventure

‘Knowledge’ is a huge and broad subject, so it is important to define what we really mean if the term is to have value.

CGD Forms GaN Eco-system with Chicony Power and Cambridge University Technical Services

Cambridge GaN Devices (CGD) has signed a tripartite agreement with Chicony Power Technology Co., Ltd (TWSE: 6412) of Taiwan and Cambridge University Technical Services (CUTS), UK, to conceive and develop advanced, efficient, high power-density adapters and data centre power products using GaN.

Leadership Article | Zahid Ansari: Sustainability as the purpose of a company

Establishing a clear purpose and maintaining alignment during a scale-up phase lays the groundwork for a stable and prosperous business in the long run.

CGD's ICeGaN HEMTs Awarded "Best Demo" at TSMC European Innovation Zone

ICeGaN™ GaN HEMT System-on-Chip (SoC) was awarded “Best Demo” at the Innovation Zone of TSMC’s 2023 Europe Technology Symposium.